The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Nov. 08, 2000
Applicant:
Inventor:
Jeremy Allam, Cambridge, GB;
Assignee:
Hitachi Europe Limited, Maidenhead, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/10328 ; H01L 3/1107 ; H01L 2/118 ;
U.S. Cl.
CPC ...
H01L 3/10328 ; H01L 3/1107 ; H01L 2/118 ;
Abstract
Semiconductor structures and a method of forming semiconductor structures The avalanche breakdown characteristics, such as breakdown voltage and impact ionisation coefficient, of a semiconductor structure can be controlled by controlling the Brilluin-zone-averaged energy bandgap (<E >) of the material forming the structure. Consequently, the avalanche breakdown characteristics of a device may be tailored independently of the bandgap E . The Brillouin-zone-averaged energy bandgap (<E >) may be controlled by controlling the composition of the semiconductor used or by straining its lattice.