The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Feb. 26, 2001
Applicant:
Inventor:
Fumihiko Sato, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ;
U.S. Cl.
CPC ...
H01L 2/1331 ;
Abstract
A semiconductor device including a bipolar transistor formed by epitaxial growth or ion implantation is provided has an epitaxial silicon collector layer, a base region directly under an emitter defined as an intrinsic base and a peripheral region thereof defined as an outer base region is formed by the step of implanting ions into the collector layer to form a high concentration collector region at a location close to a buried region using a photoresist to form an aperture, and the step of implanting ions into the collector layer to form a high concentration collector region directly beneath the base region after forming the base region.