The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Nov. 20, 2000
Hiroyuki Kitamura, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a method for fabricating a capacitor having a capacitor dielectric film formed of Ta O in a semiconductor device, after a capacitor lower electrode is formed on an insulating film formed on a semiconductor substrate and a Ta O film is formed on the capacitor lower electrode, the semiconductor substrate is immersed into a H O containing solution, and then, the semiconductor substrate is heat-treated. Thereafter, a capacitor upper electrode is formed on the Ta O film. Thus, the film quality of the Ta O film is improved over the whole surface of the capacitor dielectric film, so that a capacitor having an excellent heat resistance property and a good leak current characteristics is realized, and at the same time, a good reliability of the transistor is maintained, since the transistor is subjected to no ultraviolet radiation.