The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Jan. 20, 2000
Applicant:
Inventor:
Feng Jin, Orlando, FL (US);
Assignee:
Agere Systems Guardian Corp., Orlando, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 ;
U.S. Cl.
CPC ...
G03F 7/00 ;
Abstract
Disclosed is a lithographic method utilizing a phase-shifting mask having a pattern comprising a plurality of substantially transparent regions and a plurality of substantially opaque regions wherein the mask pattern phase-shifts at least a portion of incident radiation and wherein the phases are substantially equally spaced, thereby increasing resolution of a given lithographic system. Further disclosed is a method for fabricating a semiconductor device utilizing the phase-shifting mask.
Jin, Feng. (2002). Lithographic method utilizing a phase-shifting mask (U.S. Patent No. 6436608). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6436608
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile