The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Feb. 27, 2001
Yong Woo Shin, Yongin, KR;
Chul Ju Hwang, Seongnam, KR;
Jusung Engineering Co., Ltd., , KR;
Abstract
An apparatus for fabricating a semiconductor device includes: a reactive chamber having an inlet and an outlet for a gas and being electrically grounded; a susceptor installed in the reactive chamber for mounting a wafer thereon and being electrically insulated with the reactive chamber; and an RF generator for applying an RF electric power to the susceptor. A method for cleaning the apparatus for fabricating a semiconductor device includes the steps of: injecting a plasma forming gas through the gas inlet; and moving the susceptor in the vertical direction of the face of the wafer while applying the RF electric power to the susceptor, to control the position and the density of the plasma. Since the plasma is formed even at the shadow area, such as the lower space of the susceptor within the reactive chamber where plasma could be hardly formed, there is no need to clean separately the lower space of the reactive chamber. Thus, the cleaning process is simplified. In addition, since the density of the plasma can be easily controlled without increase or decrease of the RF electric power by transferring the susceptor vertically, the inside of the reactive chamber can be uniformly and effectively cleaned with the plasma.