The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2002
Filed:
Sep. 11, 2000
Applicant:
Inventor:
Kaoru Narita, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/362 ;
U.S. Cl.
CPC ...
H01L 2/362 ;
Abstract
The distance between an anode and a cathode of a thyristor and the anode and the cathode of a diode formed in a semiconductor protective circuit are made a small as allowable by LSI manufacturing technology, thereby achieving fast starting speed and a low internal resistance when in the conducting condition, so as to limit the rise in voltage on an internal circuit, even when a high-speed pulse is applied.
Narita, Kaoru. (2002). Semiconductor protective device and method for manufacturing same (U.S. Patent No. 6433393). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6433393
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile