The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2002
Filed:
Feb. 10, 2000
Richard A. Metzler, Mission Viejo, CA (US);
VRAM Technologies, LLC, Costa Mesa, CA (US);
Abstract
Semiconductor diodes are diode connected cylindrical junction field effect devices having one diode terminal as the common connection between a top gate, a back gate and a first channel terminal of the cylindrical junction field effect devices. The second diode terminal of the semiconductor diodes being the second channel terminal of the diode connected cylindrical junction field effect devices. The method of processing the cylindrical junction field effect devices provide very short channels, shallow diffused regions and trench terminated junctions at the edges of the active device for low forward voltage turn-on and high reverse bias breakdown. The trench terminated junctions spread the breakdown energy over the entire active device region rather than just device edges.