The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2002

Filed:

Dec. 28, 1999
Applicant:
Inventor:

Wataru Shimizu, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 2/300 ; H01L 2/166 ;
U.S. Cl.
CPC ...
G01N 2/300 ; H01L 2/166 ;
Abstract

The object is to provide a method capable of detecting the carrier profile with ease and without any limitation. The method for detecting the carrier profile includes a measurement step , the first analysis step , and the second analysis . In the measurement step , a p-n junction portion (FIG. 2) to which a bias voltage is applied, is irradiated with laser beams P (FIG. 2) capable of moving the irradiation position thereof, thereby detecting the relation between the irradiation position and the OBIC generated in the p-n junction portion. In the first analysis step , there is detected, based on the relation as detected in the measurement step , the relation between the expanded width of a depletion layer generated in the p-n junction portion and the bias voltage. In the second analysis step , there is detected, based on the relation as detected in the first analysis step , a carrier profile in the p-n junction portion.


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