The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2002
Filed:
Oct. 04, 1999
Takashi Yunogami, Niiza, JP;
Kazuo Nojiri, Higashimurayama, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Fine etching of ruthenium or ruthenium oxide is suited for a ferroelectric and high dielectric film such as BST. Over a silicon oxide film and a plug a titanium nitride film ruthenium film ruthenium dioxide film and silicon oxide film are stacked successively. After patterning the silicon oxide film with a resist film, the resist film is removed. In the presence of the patterned silicon oxide film the ruthenium dioxide film and ruthenium film are etched under processing pressure of 15 mTorr, plasma source power of 500 W, RF bias power of 200 W, oxygen flow of 715 sccm, chlorine flow of 80 sccm, total flow of about 800 sccm, gas residence time of 49.3 msec, and over etching of 100%.