The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2002
Filed:
Dec. 22, 2000
Jeong Ho Kim, Kyoungki-do, KR;
Jae Seon Yu, Kyoungki-do, KR;
Abstract
The present invention discloses a method for fabricating a semiconductor device. A protective film for protecting a device isolation film is formed on the device isolation film for the contact hole formation process, thereby preventing a device isolation film from being damaged due to misalignment in a lithography process or overetch during the etch process. Accordingly, gate induced drain leakage current is not generated, contact junction leakage current is reduced, and the contact properties are improved. Improvements in the contact properties produce corresponding improvements in the properties and yield of the semiconductor devices manufactured according to the invention.