The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2002
Filed:
Dec. 02, 1999
Takayuki Yamada, Osaka, JP;
Masaru Moriwaki, Osaka, JP;
Matsushita Electric Industrial Co., Inc., Osaka, JP;
Abstract
After an insulating film, serving as a gate insulating film, is formed on a semiconductor layer formed on a substrate, a target made of tungsten is sputtered in an ambient of a gas mixture of an argon gas and a nitrogen gas. In the sputtering process, a surface region of the insulating film serving as the gate insulating film is nitrided, while a crystal mixture film composed of a mixture of a tungsten crystal and a tungsten nitride crystal is deposited on the insulating film. The crystal mixture film serves to compose at least a part of a gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile