The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2002
Filed:
Nov. 06, 2000
Kyu-Hyun Lee, Kyunggi-do, KR;
Samsung Electronics Co., Ltd., Kyunggi-Do, KR;
Abstract
A method of fabricating a capacitor storage node having HSG silicon on inner walls thereof, wherein the HSG silicon is formed on the inner walls of the storage node after a sacrificial insulating layer is removed, thereby increasing overall surface area of the storage node and preventing electrical bridges between adjacent storage nodes. The storage node is made of a double layer including a layer of crystallized silicon and a layer of amorphous silicon, formed in a storage opening that is formed in the sacrificial insulating layer. The crystallized silicon defines outer walls of the storage node and the amorphous silicon defines inner walls. After forming the storage node opening in the sacrificial insulating layer, crystallized silicon is formed in the opening. Amorphous silicon is then formed on the crystallized silicon. After removing the sacrificial insulating layer, HSG silicon is formed on the amorphous silicon layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile