The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2002
Filed:
Apr. 09, 2001
Applicant:
Inventors:
Chi-Chun Chen, Kaohsiung, TW;
Horng-Chih Lin, Hsinchu, TW;
Chun-Yen Chang, Hsinchu, TW;
Tiao-Yuan Huang, Hsinchu, TW;
Assignee:
National Science Council, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1425 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1425 ; H01L 2/1336 ;
Abstract
A method of forming a gate oxide layer with improved ability to resist process damage increases the reliability and yield of a transistor device. First, a nitrogen-containing gate oxide layer is formed on an element area of a silicon substrate. Then, a polysilicon layer is deposited on the gate oxide layer. Next, a gate doping process and a fluorine ion implantation are performed on the polysilicon layer. Then, a high-temperature tempering procedure is performed to make the fluorine enter the gate oxide layer.