The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2002
Filed:
Nov. 28, 2000
Applicant:
Inventor:
Hi Deok Lee, Chungcheongbuk-do, KR;
Assignee:
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/1425 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/1425 ;
Abstract
The manufacturing method produces a semiconductor in which current is not generated during the off state by reducing the electric field at the corner of an active region. The method includes patterning a gate material layer on a predetermined portion on the active region. The mask has an open region which exposes the active region but does not expose the filed region. A gate electrode and source/drain regions are formed by doping impurities into the exposed gate material layer and the active region.
Lee, Hi. (2002). Method for doping a semiconductor device through a mask (U.S. Patent No. 6432783). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6432783
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile