The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2002
Filed:
Sep. 21, 2000
Tetsuya Taguwa, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A method of carrying out a plasma-enhanced chemical vapor deposition. A process gas is introduced into a reaction chamber containing a susceptor having a first region on which a semiconductor substrate is placed and a second region other than the first region, upon which a ceramics insulator is placed. A plasma is generated between the susceptor and an electrode, and a thin film is formed on the semiconductor substrate and on the ceramics insulator covering the second region of the susceptor. The resulting plasma-enhanced chemical vapor deposition results in enhanced uniformity of the thin metal film formed on the semiconductor substrate, and improved yield, and barrier characteristics.