The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2002

Filed:

Jun. 28, 1999
Applicant:
Inventors:

Kenji Nakanishi, Chiba, JP;

Hideo Nojima, Nara, JP;

Yasushi Ogimoto, Noda, JP;

Yoshihiro Takahashi, Kashiwa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D 3/02 ;
U.S. Cl.
CPC ...
B05D 3/02 ;
Abstract

A perovskite type manganese oxide thin film capable of working at temperatures within an electron cooling range and a high sensitivity infrared sensing element using the same thin film are disclosed. The thin film of perovskite type manganese oxide containing an element Ca or Sr and elements La, Mn and O is characterized in that a metal-insulation phase transition point of the thin film lies within a range of temperatures obtainable by a thermoelectric cooling method. The perovskite type manganese oxide is a thin film produced by a sol-gel method and the film is used for manufacturing an infrared sensing element.


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Nakanishi, Kenji. (2002). Thin film of perovskite type manganese oxide process for producing the same thin film and an infrared sensing element using the same thin film (U.S. Patent No. 6432474). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6432474

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