The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6429635 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 06, 2002

Filed:

Mar. 08, 2001
Applicant:
Inventor:

Toshiro Okubo, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/40 ; G05F 1/44 ; G05F 1/56 ;
U.S. Cl.
CPC ...
G05F 1/40 ; G05F 1/44 ; G05F 1/56 ;
Abstract

A drive circuit for driving an FET includes a charge pump circuit which comprises multi-stage switching elements, condensers, and inversion buffers, and operates in response to the oscillatory output of an oscillator circuit; and a comparison means for comparing the output voltage of the charge pump circuit with a preset reference voltage to thereby control the oscillation of the oscillator circuit. The charge pump circuit is thus operated intermittently so as to provide a sufficiently large gate voltage to the MOSFET in a stable manner, thereby maintaining a constant output-load characteristic.


Find Patent Forward Citations

Okubo, Toshiro. (2002). Drive circuit for insulated gate type fets (U.S. Patent No. 6429635). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6429635

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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