The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
Mar. 09, 2000
Masanobu Tsuchitani, Fuchu, JP;
Shingo Satou, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A power device has its main junction formed in a central portion of an N-type substrate. A P-type layer is formed in a peripheral surface portion of the substrate. A P -type RESURF layer of a lower impurity concentration than the P-type layer is formed outside and in contact with the P-type layer. An N -channel stopper layer is formed in an edge surface portion of the substrate. The channel stopper layer is separated from the RESURF layer by a predetermined distance. A recess is formed in that surface portion of the substrate between the P-type layer and the channel stopper layer, which includes a surface portion of the RESURF layer. A semiconductive film is formed in the recess. The RESURF layer has an impurity concentration of about 10 atoms/cm where it contacts the semiconductive film.