The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
Mar. 01, 2001
Masayuki Suzuki, Kokubunji, JP;
Kentaro Yamada, Hitachinaka, JP;
Masashi Sahara, Hitachinaka, JP;
Takashi Nakajima, Chiyoda, JP;
Naoki Kanda, Sagamihara, JP;
Hidenori Suzuki, Tachikawa, JP;
Yoshinori Matsumuro, Hitachinaka, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Bit lines BL of a DRAM that are narrowed to 0.1 &mgr;m or less are made of two-layered conductive films, in which a W (tungsten) film is deposited on a WN (tungsten nitride) film. For bit lines BL, fewer W atoms diffuse across the interface between the W film and the WN film, within crystal grains, and at grain boundaries of the W film, and no tensile stress exists in the W film. Therefore, high-temperature thermal processing in the capacitor formation process does not cause wiring breaks even when the width of the bit lines BL is narrowed to 0.1 &mgr;m or less.