The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
Apr. 13, 2000
Eric Shanks Johnson, Scottsdale, AZ (US);
Nyles Wynn Cody, Tempe, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method of fabricating an Emode HIGFET semiconductor device, and the device, is disclosed including epitaxially growing by metal-organic chemical vapor deposition an epitaxial buffer. The buffer includes a layer of short-lifetime gallium arsenide on a gallium arsenide substrate and a layer of aluminum gallium arsenide on the layer of short-lifetime gallium arsenide. The short-lifetime gallium arsenide is grown at a temperature below approximately 550° C. so as to have a lifetime less than approximately 500 picoseconds. A stack of compound semiconductor layers is then epitaxially grown on the layer of aluminum gallium arsenide of the buffer and an Emode field effect transistor is formed in the stack.