The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
Aug. 23, 2001
Applicant:
Inventors:
Kazuo Itoh, Osaka, JP;
Hiroyuki Yamauchi, Osaka, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
The accuracy in forming a gate electrode or an interconnect is improved by using a dummy gate electrode or a dummy interconnect. In addition, the dummy gate electrode or the dummy interconnect is removed, so that a region where the dummy gate electrode or the dummy interconnect has been disposed can be used as a region for forming another composing element.
Itoh, Kazuo. (2002). Method for fabricating semiconductor device (U.S. Patent No. 6429060). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6429060
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile