The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
Apr. 06, 2000
Zhenan Bao, North Plainfield, NJ (US);
Xiaochen Linda Chen, Parsippany, NJ (US);
Agere Systems Guardian Corp., Orlando, FL (US);
Abstract
An organic semiconducting material having bi-polar charge transport characteristics is described which may comprise the active layer of a field-effect transistor. The semiconducting material comprises a bi-polar polymeric film effective for hole or electron transport comprising a polymer having a conjugated framework with functional moieties capable of solvating ions or promoting ionic charge transport. The conjugated framework is selected from at least one of thiophene, pyrrole, benzene, naphthalene, antrhacene, and antrhacene-dione, and the functional moieties are selected from (i) functional side groups comprising salts of carboxylic acid and sulfonic acid and (ii) functional sites selected from heteroatoms having electron lone pairs comprising sulfur, nitrogen, and oxygen. The field-effect mobility of the bi-polar polymeric film is at least 10 cm /Vs when operating as an n-type or p-type device.