The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2002
Filed:
Jun. 25, 1999
Tetsuhiro Tanabe, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A semiconductor laser device includes a substrate formed of GaAs. A lower electrode is formed on an underside of this substrate. The substrate has, on its top surface, a lower cladding layer, an active layer, a first upper cladding layer, an etch stop layer, a current restricting layer, a second contact layer and an upper electrode formed in this order. A second upper cladding layer is formed widthwise centrally of the current restricting layer. A first contact layer and an insulation film are formed on the second upper cladding layer. This insulation film blocks a current from flowing from the upper electrode to an end of an optical waveguide. Accordingly, a current non-injection region is provided at an end of the active layer or optical waveguide.