The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2002
Filed:
Feb. 20, 2001
Ting-Wah Wong, Cupertino, CA (US);
Programmable Silicon Solutions, San Jose, CA (US);
Abstract
A radio frequency device may be formed which has high power output and high transistor switching speeds. This may be done by providing thicker gate oxides and a higher supply potential to transistors utilized to form the power amplifier and using thinner gate oxides conventionally associated with high switching speed and advanced process technologies for other applications on the same integrated circuit. Thus, high switching speeds can be achieved-with some transistors which utilize a lower supply voltage and high power output can be achieved from other transistors which are coupled to a higher supply voltage. The different types of transistors may be made in the same integrated circuit fabrication process on the same integrated circuit.