The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2002
Filed:
Aug. 23, 2000
Roland Sittig, Braunschweig, DE;
Detlef Nagel, Dresden, DE;
Ralf-Ulrich Dudde, Hohenaspe, DE;
Bernd Wagner, Looft, DE;
Klaus Reimer, Itzehoe, DE;
Abstract
The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section ( ) provided in the border area of an anode metallic coating ( ) is fixed (directly in the edge area) on the substrate ( ) of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating MET ) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET . . . ) is distanced and insulated from one of these surrounding outer metallic coatings (MET ) by the surrounding base area (SB) of the insulator profile ( ) such that an extensively constant course of the line of force which evades extreme values results between both metallic coatings ( , MET , MET ) when reverse voltage or blocking voltage is applied between the interspaced metallic coatings.