The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2002
Filed:
Jan. 10, 2001
Kiyoteru Kobayashi, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
To provide a semiconductor memory device comprising flash memory cells having higher writing speed, the semiconductor memory of the present invention comprises memory cells each having a channel region, an n-type drain region and an n-type source region that are disposed on both sides of the channel region, a floating gate formed over the channel region via a first oxide film and a control gate formed over the floating gate via a second oxide film, which are formed on a p-type Si substrate, wherein the floating gate includes of a first region located over the channel region via the first oxide film and a second region that is formed to be wider than the first region and is capacitively coupled with the control gate via the second oxide film, the floating gate having T-shaped longitudinal section, wherein a height of the first region is set so that the floating gate has the maximum potential when a control voltage is applied to the control gate.