The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2002
Filed:
Aug. 10, 2000
Applicant:
Inventors:
Tatjana Traijkovic, Cambridge, GB;
Florin Udrea, Cambridge, GB;
Gehan Anil Joseph Amaratunga, Cambridge, GB;
Assignee:
Dynex Semiconductor Limited, Lincoln, GB;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/974 ;
U.S. Cl.
CPC ...
H01L 2/974 ;
Abstract
A semiconductor device comprises an active area with a voltage termination structure located adjacent to the active area at an edge portion of the device. The edge portion comprises a substrate region ( ) of a first semiconductor type, and the voltage termination structure comprises first and second layers ( and ) formed within the substrate region. The first and second layers ( and ) define regions each of a second semiconductor type.