The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2002
Filed:
Nov. 15, 2000
Applicant:
Inventors:
Assignee:
NGK Insulators, Ltd., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/978 ;
U.S. Cl.
CPC ...
H01L 2/978 ;
Abstract
Strip-shaped ditches are formed on a sapphire substrate as a base material. Then, the sapphire substrate is set into a CVD chamber, and an Al Ga In N (x+y+z=1,x>0,y,z≧0)film is epitaxially grown on the sapphire substrate so as to embed the ditches by a selective lateral epitaxial growth method. As a result, the Al Ga In N film has low dislocation density areas on at least one of the concave portions and the convex portions of the strip-shaped ditches.