The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2002
Filed:
Jan. 05, 2000
Rohm Co., Ltd., Kyoto, JP;
Abstract
A light emitting layer forming portion ( ) comprising InGaAlP based compound semiconductor and forming a light emitting layer is deposited on an n-type GaAs substrate ( ), a p-type current dispersion layer ( ) comprising AlGaAs based compound semiconductor is provided on a surface of the light emitting layer forming portion ( ), a p-side electrode ( ) is provided on a portion of a surface of the current dispersion layer ( ) through a contact layer ( ) comprising p-type GaAs, and an n-side electrode ( ) is provided on a back. surface of the GaAs substrate ( ). Vickers' hardness of the current dispersion layer ( ) comprising AlGaAs is 700 or higher. As a result, at the time of handling for mounting, or wire bonding, a fracture or a crack is not generated in the LED chip, and it is possible to enhance the yield of assembling steps.