The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2002
Filed:
Oct. 19, 1999
Dong-Joo Bae, Seoul, KR;
Kang-Wan Lee, Seoul, KR;
Other;
Abstract
A method and a device for locally heating a semiconductor wafer having a first region of a first impurity and a second region of a second impurity having a diffusion rate different from that of the first impurity. A field oxide layer, a P well and an N well, gate oxide layers, gate electrodes, an N-type region and a P-type region are formed in sequence on or in a silicon wafer. The wafer is placed into a chamber. Then, a mask, which has a pattern for blocking the radiation from the heat source to the N well of the wafer, is positioned between the heat source and the wafer. The heat source emits radiation for heating the wafer, thereby the donor-type dopant atoms in the N-type region are diffused with a diffusion depth of d to form an electrically active region, but the acceptor-type dopant atoms in the P-type region are not diffused. After this step, a mask, which has a pattern for blocking the radiation from the heat source to the P well of the wafer, is positioned between the heat source and the wafer. The heat source emits radiation for heating the wafer, thereby the acceptor-type dopant atoms in the P-type region are diffused with a diffusion depth of d to form an electrically active region, but the donor-type dopant atoms in the N-type region are not diffused.