The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2002
Filed:
Sep. 14, 2000
Applicant:
Inventor:
Shinichi Tanaka, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ; H01L 2/18222 ;
U.S. Cl.
CPC ...
H01L 2/1331 ; H01L 2/18222 ;
Abstract
In an element intrinsic region of a bipolar transistor, an emitter is formed by two emitter layers so as to reduce the potential barrier presented to minority carriers, this resulting in a smooth flow of minority carriers that are injected into the base layer from the emitter, and in the element external region the emitter layer that acts to reduce the potential barrier to injected minority carriers is removed, thereby suppressing the injection of minority carriers from the emitter layer into the base layer.