The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2002
Filed:
Oct. 12, 2000
Applicant:
Inventors:
Takeshi Matsushita, Kanagawa, JP;
Shinichi Mizuno, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
The present invention provides a method of manufacturing a semiconductor device, particularly a solar cell, which is capable of forming a desired electrode pattern by a simple process at low cost. In the method, p-type semiconductor layers are formed on a silicon substrate, and a n-type semiconductor layer is formed on the p-type semiconductor layers, and partially removed in a predetermined pattern by laser abrasion to expose the p-type semiconductor layers, thereby forming an electrode pattern.