The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2002

Filed:

Dec. 30, 1999
Applicant:
Inventor:

Maria del Mar Hershenson, Palo Alto, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 1/750 ; G06F 1/717 ;
U.S. Cl.
CPC ...
G06F 1/750 ; G06F 1/717 ;
Abstract

A method for providing a mathematical expression representing the operation of a field-effect transistor in its saturation region is disclosed. Data representing the operation of the transistor is divided into data segments with a monomial function fitted to each of the segments. The data segments are selected for a particular operating parameter such as transconductance based on knowledge of the transistor operation. The error at the transition from one function to another is checked and the data segments redivided to minimize the error. The resulting expression lends itself to global solution with geometric programs.


Find Patent Forward Citations

del Mar Hershenson, Maria. (2002). Saturation region transistor modeling for geometric programming (U.S. Patent No. 6425111). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6425111

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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