The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6424579 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 23, 2002

Filed:

Apr. 09, 2001
Applicant:
Inventors:

Mihoko Akiyama, Hyogo, JP;

Akira Yamazaki, Hyogo, JP;

Fukashi Morishita, Hyogo, JP;

Yasuhiko Taito, Hyogo, JP;

Nobuyuki Fujii, Hyogo, JP;

Mako Okamoto, Hyogo, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 ;
U.S. Cl.
CPC ...
G11C 7/00 ;
Abstract

In an eDRAM, there are provided a VDC that down-converts an external power supply potential to generate an internal power supply potential for a sense amplifier band, and a VDC that down-converts the external power supply potential to generate an internal power supply potential for a column decoder. The response of the VDC is improved by increasing the through current of the VDC only during the period of time corresponding to an amplify operation of the sense amplifier. Therefore, current consumption is smaller than the conventional case where the through current of the VDC is set at a high constant level.


Find Patent Forward Citations

Akiyama, Mihoko. (2002). Semiconductor memory device with internal power supply potential generation circuit (U.S. Patent No. 6424579). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6424579

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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