The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2002
Filed:
May. 09, 2000
Katsumi Sato, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
This invention relates to a pressure-contact type semiconductor device ( ) having a ring-shaped gate terminal, and aims at overcoming such a technical problem that a gate current is not uniformly supplied to a semiconductor substrate ( ) due to a connection structure for the device ( ) and an external gate driver ( ). For this purpose, a ring-shaped gate terminal ( ) is structured as a resistor whose resistivity is at least 0.1 m&OHgr;·cm in the present invention. Thus, a voltage drop by the aforementioned resistor enlarges in a concentrated part of the gate current, and it follows that the gate current is shunted to another non-concentrated part. The present invention is utilizable as a high-power element in a power applied device.