The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2002
Filed:
Feb. 08, 2000
Applicant:
Inventors:
Sung-Min Sim, Suwon-shi, KR;
Young-Goan Jang, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/1469 ;
Abstract
There is provided a semiconductor device having a silicon oxynitride passivation layer and a fabrication method thereof. The passivation layer is formed of a silicon oxynitride having a dielectric constant of 5.0-6.0 and an atomic composition ratio of silicon (25-40%), oxygen (25-40%), and nitrogen (25-40%). Therefore, the passivation layer has a low dielectric constant and is highly moisture-resistant to thereby reduce the parasitic capacitance between metal wiring layers.