Hydrogen gettering structure including silver-doped palladium layer to increase hydrogen gettering of module component and semiconductor device module having such structure, and methods of fabrication

Abstract

Disclosed are hydrogen gettering structure ( ) and use of such structure and methods of forming such structure. The hydrogen gettering structure ( ) includes a titanium member ( ) and a silver-doped palladium layer ( ) on the titanium member ( ), the silver assisting palladium to increase the hydrogen gettering. The silver-doped palladium can be deposited on the titanium member by sputtering. The hydrogen gettering structure ( ) can be attached to a semiconductor module component ( ) and incorporated in a semiconductor module ( ) to increase hydrogen gettering, or can be included in other structure (e.g., nuclear reactor structure) where absorption or gettering of hydrogen is necessary or desired.