The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2002

Filed:

Jul. 27, 2001
Applicant:
Inventors:

Dean Tran, Westminster, CA (US);

Jerry T. Fang, Palos Verdes Estates, CA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/320 ; H01L 2/144 ; H01L 2/148 ; H01L 2/150 ;
U.S. Cl.
CPC ...
H01L 2/320 ; H01L 2/144 ; H01L 2/148 ; H01L 2/150 ;
Abstract

Disclosed are hydrogen gettering structure ( ) and use of such structure and methods of forming such structure. The hydrogen gettering structure ( ) includes a titanium member ( ) and a silver-doped palladium layer ( ) on the titanium member ( ), the silver assisting palladium to increase the hydrogen gettering. The silver-doped palladium can be deposited on the titanium member by sputtering. The hydrogen gettering structure ( ) can be attached to a semiconductor module component ( ) and incorporated in a semiconductor module ( ) to increase hydrogen gettering, or can be included in other structure (e.g., nuclear reactor structure) where absorption or gettering of hydrogen is necessary or desired.


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