The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2002
Filed:
Dec. 30, 1999
Pierre J. Verlinden, Palo Alto, CA (US);
Akira Terao, Cupertino, CA (US);
Haruo Nakamura, Wako, JP;
Norio Komura, Wako, JP;
Yasuo Sugimoto, Wako, JP;
Junichi Ohmura, Wako, JP;
Other;
Abstract
A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, by depositing and patterning a first metal layer comprising aluminum on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing an insulator layer of inorganic material on the first metal layer, by etching and patterning the insulator layer in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, and by depositing a second three-layer metal stack comprising materials other than aluminum, on the insulator layer of polyimide in such a way that the second three-layer metal stack comes into contact with the one of the p-doped regions and the n-doped regions. With this, the cell surface to be soldered onto a metallized substrate is well planarized and even to ensure sufficient conductibility, with less voids and less solder fatigue.