The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2002
Filed:
Aug. 30, 1999
Applicant:
Inventors:
Assignee:
Case Western Reserve University, Cleveland, OH (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25B 9/00 ; C25C 7/00 ; C25D 1/700 ;
U.S. Cl.
CPC ...
C25B 9/00 ; C25C 7/00 ; C25D 1/700 ;
Abstract
An electrode ( ) formed from a layer ( ) of tetrahedral carbon doped with nitrogen (taC:N) has both electroanalytical and electrosynthetic applications. The electrode includes a substrate material ( ), such as a silicon wafer, for supporting the taC:N layer. The electrode has good durability under a high anodic potential and high selectivity for conversion of chloride ions to chlorine, and for other electron transfer reactions. The electrode is readily formed at ambient temperatures by vacuum deposition of carbon and nitrogen ions on to the substrate. Masking of the substrate during deposition allows the formation of microelectrode arrays.