The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2002

Filed:

Feb. 12, 1999
Applicant:
Inventor:

Bo Su, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06K 9/00 ; H04N 7/18 ; G01N 2/100 ; G03F 9/00 ;
U.S. Cl.
CPC ...
G06K 9/00 ; H04N 7/18 ; G01N 2/100 ; G03F 9/00 ;
Abstract

A method and apparatus for inspecting a feature formed on the surface of a semiconductor wafer predicts the profile of the feature and pinpoints the stepper settings of the inspected feature by inspecting the feature using standard SEM imaging techniques. Embodiments include forming and SEM-imaging a plurality of reference features, comparable to the target feature to be inspected, on a reference semiconductor wafer, each of the reference features associated with a known profile and stepper setting. The reference SEM waveform associated with an optimal profile is selected as a golden waveform, then a waveform corresponding to the target feature is compared with the golden waveform. If the target waveform does not substantially match the golden waveform, the reference waveform which most closely matches the target waveform is identified, to determine the profile and stepper settings of the target feature. The difference between the golden waveform stepper setting and the target feature stepper setting is then determined. Thus, the profile and stepper settings of the inspected feature are pinpointed, thereby facilitating investigation of the causes of feature defects or variations from optimal dimensions and enabling effective corrective action to be implemented.


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