The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2002
Filed:
Nov. 14, 2001
Jy-Der David Tai, Phoenix, AZ (US);
AMIC Technology (Taiwan) Inc., Hsin-Chu Hsien, TW;
Abstract
A magneto-resistive random access memory (MRAM) includes a bias source, a first magneto-resistor and an address decoder. The bias source includes a current mirror for mirroring current, and a bandgap circuit connected to the current mirror for providing a fixed voltage across a second magneto-resistor. The first magneto-resistor has an array of magneto-resistors electrically connected to the bias source for storing bit information. The address decoder is electrically connected to the first magneto-resistor for selecting the array of magneto-resistors so as to access the bit information. The current mirror mirrors current onto the first magneto-resistor to generate a sensing current through the first magneto-resistor so that the voltage across the second magneto-resistor is proportional to a voltage across the first magneto-resistor.