The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2002
Filed:
Feb. 26, 2001
Masahito Takahashi, Tachikawa, JP;
Shiro Akamatsu, Kodaira, JP;
Akihiko Satoh, Hachiouji, JP;
Fukuo Owada, Ome, JP;
Masataka Kato, Koganei, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A gate electrode of a field-effect transistor used as a peripheral circuit is constituted by the same gate electrode structure as a double-level gate electrode structure of nonvolatile memory cells. A hole for connecting the two layers of the gate electrode of a first field-effect transistor used as peripheral circuit is provided at a location which two-dimensionally overlaps the active area within the plane of the gate electrode, and a hole for connecting the two layers of the gate electrode of a second field-effect transistor used as a peripheral circuit is provided at a location which two-dimensionally overlaps an isolation area within the plane of the gate electrode. The gate length of the first field-effect transistor is longer than the gate length of the second field-effect transistor, and the gate width of the first field-effect transistor is wider than the gate width of the second field-effect transistor.