The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2002
Filed:
Apr. 18, 2001
Applicant:
Inventors:
Hiroshi Ishiwara, Tokyo, JP;
Koji Aizawa, Tokyo, JP;
Assignee:
Semiconductor Technology Academic Research Center, Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/972 ;
U.S. Cl.
CPC ...
H01L 2/972 ;
Abstract
A nonvolatile semiconductor memory, including a ferroelectric capacitor connected to the gate of a MOSFET, comprises a silicon thin film formed in stripes on an insulated substrate and having an n -region, a p-region and an n -region layered in its thickness direction, a hole formed in a portion of the silicon thin film and extending to the lower n -region, a gate electrode provided on the side walls of the hole with a gate insulting film interposed therebetween, and a ferroelectric capacitor formed on the silicon thin film and having its lower electrode connected to the gate electrode.