The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2002
Filed:
Dec. 06, 2000
Denso Corporation, Kariya, JP;
Abstract
One or more capacitors are formed using thermally oxidized films formed on a silicon layer of an SOI substrate. The capacitors may be formed alone or together with other semiconductor elements on a single SOI substrate. A diffuse layer having an impurity in a high density is first formed on the silicon layer, and then an oxidized film is formed on the diffused layer by thermal oxidation. Then, contaminants in the oxidized film are driven-out under a high temperature heat treatment, thereby to improve quality of the oxidized film, such as durability against a high voltage. Plural capacitors may be formed using oxidized films having a respectively different thickness, by repeating thermal oxidation and removal of the oxidized film.