The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2002
Filed:
Feb. 23, 2000
Masahiro Ishida, Osaka, JP;
Masaaki Yuri, Osaka, JP;
Osamu Imafuji, Osaka, JP;
Shinji Nakamura, Osaka, JP;
Kenji Orita, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor device comprises a substrate having a first thermal expansion coefficient T a strain reducing layer formed on the substrate and having a second thermal expansion coefficient T and a semiconductor layer formed on the strain reducing layer, having a third thermal expansion coefficient T and made of a nitride compound represented by Al Ga In N (0≦y≦1, 0≦z ≦1). The second thermal expansion coefficient T is lower than the first thermal expansion coefficient T The third thermal expansion coefficient T is lower than the first thermal expansion coefficient T and higher than the second thermal expansion coefficient T .