The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2002
Filed:
Jun. 21, 2000
Zhijian Lu, Poughkeepsie, NY (US);
Alan Thomas, Hughsonville, NY (US);
Alois Gutmann, Poughkeepsie, NY (US);
Kuang Jung Chen, Poughkeepsie, NY (US);
Margaret C. Lawson, Millbrook, NY (US);
Other;
Abstract
In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable pieces of components of the photoresist material, Blob Defects, remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of introducing a low level uniform flood exposure of light in addition to the commonly used exposure to patterned light, followed by standard development. The flood exposure is in the range of 5 to 50% of the dose-to-clear for a non-patterned exposure.