The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2002
Filed:
Aug. 31, 1995
Hirofumi Fukumoto, Toyama, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
This invention comprises an inspection method conducted by rotary-coating a photoresist on the surface of a semiconductor substrate, irradiating ultraviolet rays using an exposure instrument such as a stepper, exposing the entire photoresist, removing the exposed photoresist using an alkali developing solution, and irradiating a laser beam onto the semiconductor substrate to detect foreign substances through the scattered light. Accordingly, gel foreign substances remain on the semiconductor substrate even after the steps of exposure and development, so that their presence can be detected surely. Furthermore, this invention provides a method and an apparatus of surely detecting gel foreign substances which are present in a photoresist film or between patterns by exposing the photoresist and performing etching and ashing, using gel foreign substances which remained through the development as a mask. A photoresist is rotary-coated on a wafer, and ultraviolet rays are irradiated on the photoresist using an exposure instrument such as a stepper, thereby exposing the entire wafer. Then, the photoresist is removed with an alkali developing solution, and the wafer which has the photoresist removed is etched, ashed, and washed. A laser beam is irradiated on the surface of the ashed wafer, and foreign substances are inspected from the reflecting scattered light.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile