The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2002

Filed:

Nov. 26, 1999
Applicant:
Inventors:

Masashi Otsuki, Musashimurayama, JP;

Hiroaki Wada, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 3/04 ; B08B 7/04 ;
U.S. Cl.
CPC ...
B08B 3/04 ; B08B 7/04 ;
Abstract

A sintered silicon carbide has a high density and only small amounts of organic and inorganic impurities on the surface and in the vicinity of the surface, i.e., a density of 2.9 g/cm or more and an amount of each impurity smaller than 1.0×10 atoms/cm on the surface and in the vicinity of the surface. A method for cleaning sintered silicon carbide in a wet condition comprises treating sintered silicon carbide in a step of dipping into a quasi-aqueous organic solvent, a step of dipping into an aqueous solution of an ammonium compound, a step of dipping into an aqueous solution of an inorganic acid and a step of dipping into pure water. Organic and inorganic impurities present on the surface and in the vicinity of the surface of the sintered silicon carbide are removed easily in accordance with the method.


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