The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2002
Filed:
Nov. 15, 1994
Applicant:
Inventors:
Wiley P. Kirk, College Station, TX (US);
Joe X. Zhou, Houston, TX (US);
Bruce E. Gnade, Dallas, TX (US);
Chih-Chen Cho, Richardson, TX (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2/514 ;
U.S. Cl.
CPC ...
C30B 2/514 ;
Abstract
A method of forming lattice matched single crystal wide bandgap II-VI compound semiconductor films over a silicon substrate includes first cleaning ( ) the silicon substrate. A passivation layer is formed ( ), which may comprise arsenic, germanium, or CaF , among others. The lattice matched layer is then grown ( ) on the passivation layer.