The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2002

Filed:

Apr. 27, 2000
Applicant:
Inventor:

Iftikhar Ahmed, Bellflower, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7095 ;
U.S. Cl.
CPC ...
H01L 2/7095 ;
Abstract

A three layer IGBT which cannot latch on is provided with a trench gate and a Schottky contact to the depletion region surrounding the trench gate. An emitter contact is connected to base diffusion regions which are diffused into the depletion region. The depletion region is formed atop an emitter region which emits carriers into the depletion region in response to the turn on of the gate and the injection of carriers from the Schottky gate.


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